UCC21739-Q1

制造商:

描述: 适用于 IGBT/SiC MOSFET 且具有隔离式模拟检测的汽车类 3kVrms ±10A 单通道隔离式栅极驱动器

物料参数

Number of channels:	1
Isolation rating:	Basic
Withstand isolation voltage (VISO) (Vrms):	3000
Working isolation voltage (VIOWM) (Vrms):	990, 2121
Transient isolation voltage (VIOTM) (VPK):	4242, 8400
Power switch:	IGBT, SiCFET
Peak output current (A):	10
Output VCC/VDD (max) (V):	33
Output VCC/VDD (min) (V):	13
Input supply voltage (min) (V):	3
Input supply voltage (max) (V):	5.5
Propagation delay time (µs):	0.09
Input threshold:	CMOS
Operating temperature range (°C):	-40 to 125
Rating:	Automotive
Bootstrap supply voltage (max) (V):	990
Rise time (ns):	33
Fall time (ns):	27
Undervoltage lockout (typ) (V):	12
Number of channels:	1
Isolation rating:	Basic
Withstand isolation voltage (VISO) (Vrms):	3000
Working isolation voltage (VIOWM) (Vrms):	990, 2121
Transient isolation voltage (VIOTM) (VPK):	4242, 8400
Power switch:	IGBT, SiCFET
Peak output current (A):	10
Output VCC/VDD (max) (V):	33
Output VCC/VDD (min) (V):	13
Input supply voltage (min) (V):	3
Input supply voltage (max) (V):	5.5
Propagation delay time (µs):	0.09
Input threshold:	CMOS
Operating temperature range (°C):	-40 to 125
Rating:	Automotive
Bootstrap supply voltage (max) (V):	990
Rise time (ns):	33
Fall time (ns):	27
Undervoltage lockout (typ) (V):	12

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